![]() ![]() Microelectronic Circuits - Fifth Edition Sedra/Smithįigure 5.8 The Ebers-Moll (EM) model of the npn transistor. Microelectronic Circuits - Fifth Edition Sedra/Smithįigure 5.7 Model for the npn transistor when operated in the reverse active mode (i.e., with the CBJ forward biased and the EBJ reverse biased). Iccuser: Figure 5.6 Cross-section of an npn BJT. Microelectronic Circuits - Fifth Edition Sedra/Smith Microelectronic Circuits - Fifth Edition Sedra/Smithįigure 5.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode. (Reverse current components due to drift of thermally generated minority carriers are not shown.) Microelectronic Circuits - Fifth Edition Sedra/Smithįigure 5.4 Profiles of minority-carrier concentrations in the base and in the emitter of an npn transistor operating in the active mode: vBE> 0 and vCB³ 0. Microelectronic Circuits - Fifth Edition Sedra/Smithįigure 5.3 Current flow in an npn transistor biased to operate in the active mode. Microelectronic Circuits - Fifth Edition Sedra/Smithįigure 5.2 A simplified structure of the pnp transistor. Figure 5.1 A simplified structure of the npn transistor. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |